Dielectric constant boost in amorphous sesquioxides

High-kappa dielectrics for insulating layers are a current key ingredient of microelectronics. X2O3 sesquioxide compounds are among the candidates. Here we show for a typical material of this class, ScO3, that the relatively modest dielectric constant of its crystalline phase is enhanced in the amorphous phase by over 40% (from ~15 to ~22). This is due to the disorder-induced activation of low frequency cation-related modes which are inactive or inefficient in the crystal, and by the conservation of effective dynamical charges (a measure of atomic polarizability). The analysis employs density-functional energy-force and perturbation-theory calculations of the dielectric response of amorphous samples generated by pair-potential molecular dynamics.Comment: 3 pages, 3 figures, submitted to AP

Conservation of dielectric constant upon amorphization in perovskite oxides

We report calculations indicating that amorphous RAO$_3$ oxides, with R and A trivalent cations, have approximately the same static dielectric constant as their perovskite crystal phase. The effect is due to the disorder-activated polar response of non-polar crystal modes at low frequency, which compensates a moderate but appreciable reduction of the ionic dynamical charges. The dielectric response was studied via density-functional perturbation theory. Amorphous samples were generated by molecular dynamics melt-and-quench simulations.Comment: 5 pages, 3 figure

Magnon-phonon interactions enhance the gap at the Dirac point in the spin-wave spectra of CrI3_3 2D magnets

Recent neutron-diffraction experiments in honeycomb CrI$_3$ quasi-2D ferromagnets have evinced the existence of a gap at the Dirac point in their spin-wave spectra. The existence of this gap has been attributed to strong in-plane Dzyaloshinskii-Moriya or Kitaev (DM/K) interactions and suggested to set the stage for topologically protected edge states to sustain non-dissipative spin transport. We perform state-of-the-art simulations of the spin-wave spectra in monolayer CrI$_3$, based on time-dependent density-functional perturbation theory (TDDFpT) and fully accounting for spin-orbit couplings (SOC) from which DM/K interactions ultimately stem. While our results are in qualitative agreement with experiments, the computed TDDFpT magnon gap at the Dirac point is found to be 0.47~meV, roughly 6 times smaller than the most recent experimental estimates, so questioning that intralayer anisotropies alone can explain the observed gap. Lattice-dynamical calculations, performed within density-functional perturbation theory (DFpT), indicate that a substantial degeneracy and a strong coupling between vibrational and magnetic excitations exist in this system, providing a possible additional gap-opening mechanism in the spin-wave spectra. In order to pursue this path, we introduce an interacting magnon-phonon Hamiltonian featuring a linear coupling between lattice and spin fluctuations, enabled by the magnetic anisotropy induced by SOC. Upon determination of the relevant interaction constants by DFpT and supercell calculations, this model allows us to propose magnon-phonon interactions as an important microscopic mechanism responsible for the enhancement of the gap in the range of $\approx 4$~meV around the Dirac point of the CrI$_3$ monolayer

First-principles study of the gap in the spin excitation spectrum of the CrI3_3 honeycomb ferromagnet

The nature of the gap observed at the zone border in the spin-excitation spectrum of CrI$_3$ quasi-2D single crystals is still controversial. We perform first-principles calculations based on time-dependent density-functional perturbation theory, which indicate that the observed gap results from a combination of spin-orbit and inter-layer interaction effects. The former give rise to the anisotropic spin-spin interactions that are responsible for its very existence, while the latter determine both its displacement from the K point of the Brillouin zone due to the in-plane lattice distortions induced by them, and an enhancement of its magnitude, in agreement with experiments and previous theoretical work based on a lattice model

Roadmap on Electronic Structure Codes in the Exascale Era

Electronic structure calculations have been instrumental in providing many important insights into a range of physical and chemical properties of various molecular and solid-state systems. Their importance to various fields, including materials science, chemical sciences, computational chemistry and device physics, is underscored by the large fraction of available public supercomputing resources devoted to these calculations. As we enter the exascale era, exciting new opportunities to increase simulation numbers, sizes, and accuracies present themselves. In order to realize these promises, the community of electronic structure software developers will however first have to tackle a number of challenges pertaining to the efficient use of new architectures that will rely heavily on massive parallelism and hardware accelerators. This roadmap provides a broad overview of the state-of-the-art in electronic structure calculations and of the various new directions being pursued by the community. It covers 14 electronic structure codes, presenting their current status, their development priorities over the next five years, and their plans towards tackling the challenges and leveraging the opportunities presented by the advent of exascale computing.Comment: Submitted as a roadmap article to Modelling and Simulation in Materials Science and Engineering; Address any correspondence to Vikram Gavini ([email protected]) and Danny Perez ([email protected]

Methylammonium fragmentation in amines as source of localized trap levels and the healing role of Cl in hybrid lead-iodide perovskites

The resilience to deep traps and localized defect formation is one of the important aspects that qualify a material as a suited photoabsorber in solar cell devices. Here we investigate by ab initio calculations the fundamental physics and chemistry of a number of possible localized defects in hybrid methylammonium lead-iodide perovskites. Our analysis encompasses a number of possible molecular fragments deriving from the dissociation of methylammonium. In particular, we found that in stoichiometric conditions both ammonia and methylamine molecules present lone-pair localized levels well within the perovskite band gap, while the radical cation CH2NH3+ observed by EPR after irradiation injects partially-occupied levels into the band gap but only in p-type conditions. These defects are thus potentially capable of significantly altering absorption and recombination properties. Amazingly, we found that additional interstitial Cl is capable of removing these localized states from the band gap. These results are consistent with the observed improvement of photoabsorption properties due to the Cl inclusion in the solution processing

Entropy-Suppressed Ferroelectricity in Hybrid Lead-Iodide Perovskites

The actual nature of the electric polarization in hybrid lead-iodide perovskites is unveiled on the basis of ab initio and model results. A finite, albeit small electric polarization of few \u3bcC/cm2 is found to be pervasive in this system, due to the polar-uncompensated alignment of methylammonium dimers, at least for temperature lower than the activation energy of dimer rotations; however, the presence of a large number of structural local minima corresponding to differently oriented polarization directions counteracts the stabilization of an ordered ferroelectric phase at the macroscale. According to our estimate, only for temperatures lower than 40-50 K a clear ferroelectric behavior is displayed. At higher temperature the polarization is progressively suppressed and the ferroelectric ordering hindered by the large configurational entropy, giving rise to a superparaelectric-like behavior at the macroscale

Thermally activated point defect diffusion in methylammonium lead trihalide: anisotropic and ultrahigh mobility of iodine

We study the diffusion of point defects in crystalline methylammonium lead halide (MAPI) at finite temperatures by using all-atoms molecular dynamics. We find that, for what concerns intrinsic defects, iodine diffusion is by far the dominant mechanism of ionic transport in MAPI, with diffusivities as high as 7.4 × 10-7 and 4.3 × 10-6 cm2 s-1 at 300 K and single activation energies of 0.24 and 0.10 eV, for interstitials and vacancies, respectively. The comparison with common covalent and oxide crystals reveals the ultrahigh mobility of defects in MAPI. Though at room temperature the vacancies are about 1 order of magnitude more diffusive, the anisotropic interstitial dynamics increases more rapidly with temperature, and it can be dominant at high temperatures. Present results are fully consistent with the involvement of iodide ions in hysteresis and have implications for improvement of the material quality by better control of defect diffusion

First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4,4) and (3,5) Stacking Faults

Using first principle calculations, we investigated the energetic and electronic properties of two stacking faults that have been recently identified experimentally in as-grown 4H-SiC homo epitaxial films. We found that both defects generate two separate split-off bands localized below the bottom of the conduction band. The energy of the deepest intra gap state associated with each defect is in excellent agreement with photoluminescence measurements. Furthermore, we calculated formation energies of 0.3 and 2.4 mJ/m(2) for the (4,4) and (3,5) defects, respectively, much smaller than the energy of any other stacking fault; this result justifies their dominance in as-grown epilayers. (C) 2011 The Japan Society of Applied Physic